Search results
Results from the WOW.Com Content Network
Because silicon dioxide is a native oxide of silicon it is more widely used compared to other semiconductors like gallium arsenide or indium phosphide. Silicon dioxide could be grown on a silicon semiconductor surface. [46] Silicon oxide layers could protect silicon surfaces during diffusion processes, and could be used for diffusion masking ...
The 25 characters of the Product Key form a base-24 encoding of the binary representation of the Product Key. The Product Key is a multi-precision integer of roughly 115 bits, which is stored in little endian byte order in an array of 15 bytes. Of these 15 bytes the least significant four bytes contain the Raw Product Key in little endian byte ...
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
Materials Studio is a client–server model software package with Microsoft Windows-based PC clients and Windows and Linux-based servers running on PCs, Linux IA-64 workstations (including Silicon Graphics (SGI) Altix) and HP XC clusters.
Dimethyldichlorosilane (Si(CH 3) 2 Cl 2) is a key precursor to cyclic (D 3, D 4, etc.) and linear siloxanes. [5] The main route to siloxane functional group is by hydrolysis of silicon chlorides: 2 R 3 Si−Cl + H 2 O → R 3 Si−O−SiR 3 + 2 HCl. The reaction proceeds via the initial formation of silanols (R 3 Si−OH): R 3 Si−Cl + H 2 O ...
In the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide.High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device.
An SOI MOSFET is a metal–oxide–semiconductor field-effect transistor (MOSFET) device in which a semiconductor layer such as silicon or germanium is formed on an insulator layer which may be a buried oxide (BOX) layer formed in a semiconductor substrate. [8] [9] [10] SOI MOSFET devices are adapted for use by the computer industry.
Silicon itself is an important semiconductor material used in microchips. It is produced commercially from silica and carbon at 1900 °C and crystallizes in a diamond cubic crystal structure. Germanium silicide forms a solid solution and is again a commercially used semiconductor material. [ 83 ]