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The Fermi level does not necessarily correspond to an actual energy level (in an insulator the Fermi level lies in the band gap), nor does it require the existence of a band structure. Nonetheless, the Fermi level is a precisely defined thermodynamic quantity, and differences in Fermi level can be measured simply with a voltmeter.
E i: The intrinsic Fermi level may be included in a semiconductor, to show where the Fermi level would have to be for the material to be neutrally doped (i.e., an equal number of mobile electrons and holes). E imp: Impurity energy level. Many defects and dopants add states inside the band gap of a semiconductor or insulator. It can be useful to ...
µ is the total chemical potential of electrons, or Fermi level (in semiconductor physics, this quantity is more often denoted E F). The Fermi level of a solid is directly related to the voltage on that solid, as measured with a voltmeter. Conventionally, in band structure plots the Fermi level is taken to be the zero of energy (an arbitrary ...
At absolute zero temperature, all of the electrons have energy below the Fermi level; but at non-zero temperatures the energy levels are filled following a Fermi-Dirac distribution. In undoped semiconductors the Fermi level lies in the middle of a forbidden band or band gap between two allowed bands called the valence band and the conduction ...
The Fermi level falls within the bulk band gap which is traversed by topologically-protected spin-textured Dirac surface states. [1] [2] A topological insulator is a material whose interior behaves as an electrical insulator while its surface behaves as an electrical conductor, [3] meaning that electrons can only move along the surface of the ...
For intrinsic semiconductors (undoped), the valence band is fully filled with electrons, whilst the conduction band is completely empty. The Fermi level is thus located in the middle of the band gap, the same as that of the surface states, and hence there is no charge transfer between the bulk and the surface. As a result no band bending occurs.
The shade follows the Fermi–Dirac distribution (black: all states filled, white: no state filled). In metals and semimetals the Fermi level E F lies inside at least one band. In insulators and semiconductors the Fermi level is inside a band gap ; however, in semiconductors the bands are near enough to the Fermi level to be thermally populated ...
The mass action law defines a quantity called the intrinsic carrier concentration, which for undoped materials: n i = n 0 = p 0 {\displaystyle n_{i}=n_{0}=p_{0}} The following table lists a few values of the intrinsic carrier concentration for intrinsic semiconductors , in order of increasing band gap.