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2. DDR4 SDRAM - Wikipedia

   en.wikipedia.org/wiki/DDR4_SDRAM

   DDR4 RAM operates at a voltage of 1.2 V and supports frequencies between 800 and 1600 MHz (DDR4-1600 through DDR4-3200). Compared to DDR3, which operates at 1.5 V with frequencies from 400 to 1067 MHz (DDR3-800 through DDR3-2133), DDR4 offers better performance and energy efficiency .

3. Memory module - Wikipedia

   en.wikipedia.org/wiki/Memory_module

   In computing, a memory module or RAM stick is a printed circuit board on which memory integrated circuits are mounted. [1] Memory modules permit easy installation and replacement in electronic systems, especially computers such as personal computers, workstations, and servers. The first memory modules were proprietary designs that were specific ...

4. DDR SDRAM - Wikipedia

   en.wikipedia.org/wiki/DDR_SDRAM

   The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed operation.

5. Comparison of memory cards - Wikipedia

   en.wikipedia.org/wiki/Comparison_of_memory_cards

   XM (requires an eXternal electro-mechanical adapter) – Technically the same as EM, but such adapter usually consists of 2 parts: a pseudo-card with pin routing and physical enclosure size that perfectly match the target slot and a break-out box (a card reader) that holds a real card. Such adapter is the least comfortable to use.

6. Memory rank - Wikipedia

   en.wikipedia.org/wiki/Memory_rank

   The number of physical DRAMs depends on their individual widths. For example, a rank of ×8 (8-bit wide) DRAMs would consist of eight physical chips (nine if ECC is supported), but a rank of ×4 (4-bit wide) DRAMs would consist of 16 physical chips (18, if ECC is supported). Multiple ranks can coexist on a single DIMM.

7. Dynamic random-access memory - Wikipedia

   en.wikipedia.org/wiki/Dynamic_random-access_memory

   DDR2 and DDR3 increased this factor to 4× and 8×, respectively, delivering 4-word and 8-word bursts over 2 and 4 clock cycles, respectively. The internal access rate is mostly unchanged (200 million per second for DDR-400, DDR2-800 and DDR3-1600 memory), but each access transfers more data.