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Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The static qualifier differentiates SRAM from dynamic random-access memory (DRAM):
There are two kinds of volatile RAM: dynamic and static. Even though both types need continuous electrical current to retain data, there are some important differences between them. Dynamic RAM (DRAM) is very popular due to its cost-effectiveness. DRAM stores each bit of information in a different capacitor within the integrated circuit.
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per ...
However dynamic memory must be repeatedly refreshed with a surge of current dozens of time per second, or the stored data will decay and be lost. Flash memory allows for long-term storage over a period of years, but it is much slower than dynamic memory, and the static memory storage cells wear out with frequent use.
The two widely used forms of modern RAM are static RAM (SRAM) and dynamic RAM (DRAM). In SRAM, a bit of data is stored using the state of a six-transistor memory cell, typically using six MOSFETs. This form of RAM is more expensive to produce, but is generally faster and requires less dynamic power than DRAM.
The writing process is similar, the difference is that now the new value that will be stored in the memory cell is driven into the bit line and the inverted one into its complement (¯). Next transistors M5 and M6 are open by driving a logic 1 (voltage high) into the word line ( W L {\displaystyle \scriptstyle WL} ).
The static/dynamic terminology used to refer to combinatorial circuits is related to the use of the same adjectives used to distinguish memory devices, e.g. static RAM from dynamic RAM, in that dynamic RAM stores state dynamically as voltages on capacitances, which must be periodically refreshed. But there are also differences in usage; the ...