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Silicon carbide (SiC), also known as carborundum (/ ˌ k ɑːr b ə ˈ r ʌ n d əm /), is a hard chemical compound containing silicon and carbon. A wide bandgap semiconductor , it occurs in nature as the extremely rare mineral moissanite , but has been mass-produced as a powder and crystal since 1893 for use as an abrasive .
Many compound materials exhibit polymorphism, that is they can exist in different structures called polymorphs. Silicon carbide (SiC) is unique in this regard as more than 250 polymorphs of silicon carbide had been identified by 2006, [1] with some of them having a lattice constant as long as 301.5 nm, about one thousand times the usual SiC lattice spacings.
Reaction bonded silicon carbide, also known as siliconized silicon carbide or SiSiC, is a type of silicon carbide that is manufactured by a chemical reaction between porous carbon or graphite with molten silicon. Due to the left over traces of silicon, reaction bonded silicon carbide is often referred to as siliconized silicon carbide, or its ...
There are several manufacturing approaches to making silicon carbide fibers. [5] [6] The one with the longest historical experience, invented in 1975 and called the Yajima process, [7] uses a pre-ceramic liquid polymer that is injected through a spinneret to produce solidified green (unfired) fibers that go through a series of processing steps, including significant time in high temperature ...
Silicon carbide was a useful material in jewelry making due to its abrasive properties, and this was the first commercial application of the Acheson process. [ 3 ] In the 1940s, first the Manhattan Project and then the Soviet atomic bomb project adopted Acheson process for nuclear graphite manufacturing (see details there).
Silicon carbide charge is sublimated from the bottom of the chamber and deposited on the upper lid, which is cooler. The Lely method , also known as the Lely process or Lely technique , is a crystal growth technology used for producing silicon carbide crystals for the semiconductor industry .
Boron carbide, B 4 C, on the other hand, has an unusual structure which includes icosahedral boron units linked by carbon atoms. In this respect boron carbide is similar to the boron rich borides. Both silicon carbide (also known as carborundum) and boron carbide are very hard materials and refractory. Both materials are important industrially.
Silicon carbide as a material has second-order nonlinearity, as well as optical transparency and low two-photon absorption. This makes silicon carbide viable to be an alternate platform for many things, including but not limited to nanofabrication, integrated quantum photonics, and quantum systems in large-scale wafers.