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The Kyropoulos method, also known as the KY method or Kyropoulos technique, is a method of bulk crystal growth used to obtain single crystals.. The largest application of the Kyropoulos method is to grow large boules of single crystal sapphire used to produce substrates for the manufacture gallium nitride-based LEDs, and as a durable optical material.
This process is significantly faster than nucleation. The reason for such rapid growth is that real crystals contain dislocations and other defects, which act as a catalyst for the addition of particles to the existing crystalline structure. By contrast, perfect crystals (lacking defects) would grow exceedingly slowly. [3]
In the falling-film crystallizer, crystals grow from a melt that forms a thin film along the inside of cooled tubes. A concurrent cooling medium flows on the outside of these tubes. This arrangement allows for reproducible and high transfer rates of heat, facilitating the growth of crystals from the falling film of melt.
Silicon crystal being grown by the Czochralski method at Raytheon, 1956. The induction heating coil is visible, and the end of the crystal is just emerging from the melt. The technician is measuring the temperature with an optical pyrometer. The crystals produced by this early apparatus, used in an early Si plant, were only one inch in diameter.
The flux method is a crystal growth method where starting materials are dissolved in a solvent (flux), and are precipitated out to form crystals of a desired compound. The flux lowers the melting point of the desired compound, analogous to a wet chemistry recrystallization. [1]
When the film reaches the edges of the shaper, the final crystal shape matches that of the shaper. The exact dimensions of the crystal will deviate from the dimensions of the shaper because every material has a characteristic growth angle, the angle formed at the triple interface between the solid crystal, liquid film, and the atmosphere. [5]
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A single crystal of the same crystallographic orientation as the seed material is grown on the seed and is progressively formed along the length of the container. The process can be carried out in a horizontal or vertical orientation, and usually involves a rotating crucible/ampoule to stir the melt.
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