Search results
Results from the WOW.Com Content Network
The heat dissipation in integrated circuits problem has gained an increasing interest in recent years due to the miniaturization of semiconductor devices. The temperature increase becomes relevant for cases of relatively small-cross-sections wires, because such temperature increase may affect the normal behavior of semiconductor devices.
The term "hot electron" comes from the effective temperature term used when modelling carrier density (i.e., with a Fermi-Dirac function) and does not refer to the bulk temperature of the semiconductor (which can be physically cold, although the warmer it is, the higher the population of hot electrons it will contain all else being equal).
At the atomic scale, a temperature gradient causes charge carriers in the material to diffuse from the hot side to the cold side. This is due to charge carrier particles having higher mean velocities (and thus kinetic energy) at higher temperatures, leading them to migrate on average towards the colder side, in the process carrying heat across the material.
The efficiency of a thermoelectric device for electricity generation is given by , defined as =.. The maximum efficiency of a thermoelectric device is typically described in terms of its device figure of merit where the maximum device efficiency is approximately given by [7] = + ¯ + ¯ +, where is the fixed temperature at the hot junction, is the fixed temperature at the surface being cooled ...
Over small changes in temperature, if the right semiconductor is used, the resistance of the material is linearly proportional to the temperature. There are many different semiconducting thermistors with a range from about 0.01 kelvin to 2,000 kelvins (−273.14 °C to 1,700 °C).
A semiconductor is a material that is between the conductor and insulator in ability to conduct electrical current. [1] In many cases their conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure.
Junction temperature, short for transistor junction temperature, [1] is the highest operating temperature of the actual semiconductor in an electronic device. In operation, it is higher than case temperature and the temperature of the part's exterior.
By analyzing TSC spectra, information can be obtained regarding energy levels in semiconductors or insulators. A driving force is required for emitted carriers to flow when the sample temperature is being increased. This driving force can be an electric field or a temperature gradient. Usually, the driving force adopted is an electric field ...