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Laurell Technologies WS-400 spin coater used to apply photoresist to the surface of a silicon wafer. Spin coating is a procedure used to deposit uniform thin films onto flat substrates. Usually a small amount of coating material in liquid form is applied on the center of the substrate, which is either spinning at low speed or not spinning at all.
SU-8 molecule. SU-8 is a commonly used epoxy-based negative photoresist.Negative refers to a photoresist whereby the parts exposed to UV become cross-linked, while the remainder of the film remains soluble and can be washed away during development.
The precursor sol can be either deposited on a substrate to form a film (e.g., by dip-coating or spin coating), cast into a suitable container with the desired shape (e.g., to obtain monolithic ceramics, glasses, fibers, membranes, aerogels), or used to synthesize powders (e.g., microspheres, nanospheres). [1]
There are four basic parameters that are involved in spin coating: solution viscosity, solid content (density), angular speed, and spin time. [13] A range of thicknesses can be achieved by spin coating. Most commonly the thicknesses range from 1-200 μm. The main properties that affect the thickness of the film are viscosity and spin speed.
A thin film of nanocrystals is obtained by a process known as "spin-coating". This involves placing an amount of the quantum dot solution onto a flat substrate, which is then rotated very quickly. The solution spreads out uniformly, and the substrate is spun until the required thickness is achieved.
The bilayers and wash steps can be performed in many different ways including dip coating, spin-coating, spray-coating, flow based techniques and electro-magnetic techniques. [1] The preparation method distinctly impacts the properties of the resultant films, allowing various applications to be realized. [ 1 ]
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The wafer is covered with photoresist liquid by spin coating. Thus, the top layer of resist is quickly ejected from the wafer's edge while the bottom layer still creeps slowly radially along the wafer. In this way, any 'bump' or 'ridge' of resist is removed, leaving a very flat layer.