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Simplified cross section of a planar NPN bipolar junction transistor. BJTs consists of three differently doped semiconductor regions: the emitter region, the base region and the collector region. These regions are, respectively, p type, n type and p type in a PNP transistor, and n type, p type and n type in an NPN transistor.
Alternately, if a germanium PNP device was used, it would have significantly different characteristics than the silicon NPN transistor. In the quasi-complementary topology, the performance of the lower pull pair, which uses a single NPN transistor, more closely matches the performance of the upper push pair, which consists of two NPN ...
Figure 3: PNP version of the emitter-follower circuit, all polarities are reversed. A small voltage change on the input terminal will be replicated at the output (depending slightly on the transistor's gain and the value of the load resistance; see gain formula below). This circuit is useful because it has a large input impedance
The NPN BJT (n-type bipolar junction transistor) and nMOS (n-type metal oxide semiconductor field effect transistor) have greater conductance than their PNP and pMOS relatives, so may be more commonly used for these outputs. Open outputs using PNP and pMOS transistors will use the opposite internal voltage rail used by NPN and nMOS transistors.
Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]
The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...
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