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Simplified cross section of a planar NPN bipolar junction transistor. BJTs consists of three differently doped semiconductor regions: the emitter region, the base region and the collector region. These regions are, respectively, p type, n type and p type in a PNP transistor, and n type, p type and n type in an NPN transistor.
The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. [1] [2] [3] It is designed for low current and power, medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3906 PNP transistor. Both types were registered by Motorola Semiconductor in ...
The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. [1] [2] It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3904 NPN transistor. [3]
The most common BJTs are NPN and PNP type. NPN transistors have two layers of n-type semiconductors sandwiching a p-type semiconductor. PNP transistors have two layers of p-type semiconductors sandwiching an n-type semiconductor. Field-effect transistors (FET) are another type of transistor which amplify current implementing extrinsic ...
BC108 family transistors from various manufacturers (ITT, CEMI, SGS-ATES, Siemens) The BC107 , BC108 and BC109 are general-purpose low power silicon NPN bipolar junction transistors found very often in equipment and electronics books/articles from Europe, Australia [ 1 ] and many other countries from the 1960s.
Alternately, if a germanium PNP device was used, it would have significantly different characteristics than the silicon NPN transistor. In the quasi-complementary topology, the performance of the lower pull pair, which uses a single NPN transistor, more closely matches the performance of the upper push pair, which consists of two NPN ...
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