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IEEE 200-1975 or "Standard Reference Designations for Electrical and Electronics Parts and Equipments" is a standard that was used to define referencing naming systems for collections of electronic equipment. IEEE 200 was ratified in 1975. The IEEE renewed the standard in the 1990s, but withdrew it from active support shortly thereafter.
For several years, the Semiconductor Industry Association (SIA) gave this responsibility of coordination to the United States, which led to the creation of an American style roadmap, the National Technology Roadmap for Semiconductors (NTRS). [5] The first semiconductor roadmap, published by the SIA in 1993.
Cross section of a 1N914 in glass axial package. As the most common mass-produced switching diode, the 1N4148 replaced the older 1N914. They can be used interchangeably, and are cross-reference replacements for each other. They differed mainly in their leakage current specification, however, today most manufacturers list common specifications.
IEC 62011 Insulating materials – Industrial, rigid, moulded, laminated tubes and rods of rectangular and hexagonal cross-section based on thermosetting resins for electrical purposes; IEC 62012 Multicore and symmetrical pair/quad cables for digital communications to be used in harsh environments; IEC 62014 Electronic design automation libraries
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
A semiconductor diode, the most commonly used type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. [4] It has an exponential current–voltage characteristic. Semiconductor diodes were the first semiconductor electronic devices.
LDMOS (laterally-diffused metal-oxide semiconductor) [1] is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often fabricated on p/p + silicon epitaxial layers.
In electronics, a cross section, cross-section, or microsection, is a prepared electronics sample that allows analysis at a plane that cuts through the sample.It is a destructive technique requiring that a portion of the sample be cut or ground away to expose the internal plane for analysis.