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Thickness of the Ge 40 Se 60 /Si film on the silicon substrate as 34.5 nm, Thickness of the Ge 40 Se 60 /Si film on the oxidized silicon substrate as 33.6 nm, Thickness of SiO 2 (with n and k spectra of SiO 2 held fixed), and; n and k spectra, in 190–1000 nm range, of Ge 40 Se 60 /Si.
Ge-V luminescence spectra measured at different temperatures. [1] Spatial map of Ge-V centers in diamond produced by ion implantation. [1] The germanium-vacancy center (Ge-V) is an optically active defect in diamond, which can be created by doping germanium into diamond during its growth or by implanting germanium ions into
General Electric in Schenectady, New York, aerial view, 1896 Plan of Schenectady plant, 1896 [19] General Electric Building at 570 Lexington Avenue, New York. During 1889, Thomas Edison (1847–1931) had business interests in many electricity-related companies, including Edison Lamp Company, a lamp manufacturer in East Newark, New Jersey; Edison Machine Works, a manufacturer of dynamos and ...
Hypothetical beta decay seen by high-resolution (germanium mainly) and TAS detectors. There is a change in philosophy when measuring with a TAS. With a germanium detector (Ge), the energy peaks corresponding to individual gammas are seen, but the TAS detector gives a spectrum of the levels populated in the decay (ideal TAS).
Germanium is a chemical element; it has symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon . It is a metalloid (more rarely considered a metal ) in the carbon group that is chemically similar to its group neighbors silicon and tin .
Synchrotron radiation was first observed by technician Floyd Haber, on April 24, 1947, at the 70 MeV electron synchrotron of the General Electric research laboratory in Schenectady, New York. [5] While this was not the first synchrotron built, it was the first with a transparent vacuum tube, allowing the radiation to be directly observed. [6]
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