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  2. 65 nm process - Wikipedia

    en.wikipedia.org/wiki/65_nm_process

    The 65 nm process is an advanced lithographic node used in volume CMOS semiconductor fabrication. Printed linewidths (i.e. transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm.

  3. List of semiconductor scale examples - Wikipedia

    en.wikipedia.org/wiki/List_of_semiconductor...

    AMD began using TSMC 7 nm starting with the Vega 20 GPU in November 2018, [128] with Zen 2-based CPUs and APUs from July 2019, [129] and for both PlayStation 5 [130] and Xbox Series X/S [131] consoles' APUs, released both in November 2020.

  4. Virtex (FPGA) - Wikipedia

    en.wikipedia.org/wiki/Virtex_(FPGA)

    The new six-input LUT represented a tradeoff between better handling of increasingly complex combinational functions, at the expense of a reduction in the absolute number of LUTs per device. The Virtex-5 series is a 65 nm design fabricated in 1.0 V, triple-oxide process technology. [22] [23]

  5. Cell microprocessor implementations - Wikipedia

    en.wikipedia.org/wiki/Cell_microprocessor...

    The reduction to 65 nm reduced the existing 230 mm 2 die based on the 90 nm process to half its current size, about 120 mm 2, greatly reducing IBM's manufacturing cost as well. On 12 March 2007, IBM announced that it started producing 65 nm Cells in its East Fishkill fab. The chips produced there are apparently only for IBMs own Cell blade ...

  6. 3 nm process - Wikipedia

    en.wikipedia.org/wiki/3_nm_process

    In 2003, a research team at NEC fabricated the first MOSFETs with a channel length of 3 nm, using the PMOS and NMOS processes. [20] [21] In 2006, a team from the Korea Advanced Institute of Science and Technology (KAIST) and the National Nano Fab Center, developed a 3 nm width multi-gate MOSFET, the world's smallest nanoelectronic device, based on gate-all-around technology.

  7. 2 nm process - Wikipedia

    en.wikipedia.org/wiki/2_nm_process

    In semiconductor manufacturing, the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node.. The term "2 nanometer", or alternatively "20 angstrom" (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors.

  8. Sunway (processor) - Wikipedia

    en.wikipedia.org/wiki/Sunway_(processor)

    65 nm process; 140.8 GFLOPS @ 1.1 GHz; Max memory capacity: 16 GB; Peak memory bandwidth: 68 GB/s; Quad-channel 128-bit DDR3; Four-issue superscalar; Two integer and two floating-point execution units; 7-stage integer pipeline and 10-stage floating-point pipeline; 43-bit virtual address and 40-bit physical address

  9. Expeed - Wikipedia

    en.wikipedia.org/wiki/Expeed

    The Expeed 3 (FR) (EI-158/175) is based on an improved Expeed 2 EI-154 with greatly increased processing speed. A new architecture in the Expeed 3 (ARM) offers a highly increased speed in its image processor (with even two pipelines on the EI-160), its H.264 video encoder and is controlled by a dual-core ARM architecture microcontroller ...