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3D model of a TO-92 package, commonly used for small bipolar transistors. A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier.
For larger source impedances, the gain is determined by the resistor ratio R L / R S, and not by the transistor properties, which can be an advantage where insensitivity to temperature or transistor variations is important. An alternative to the use of the hybrid-pi model for these calculations is a general technique based upon two-port ...
A load line diagram, illustrating an operating point in the transistor's active region.. Biasing is the setting of the DC operating point of an electronic component. For bipolar junction transistors (BJTs), the operating point is defined as the steady-state DC collector-emitter voltage and the collector current with no input signal applied.
Full hybrid-pi model. The full model introduces the virtual terminal, B′, so that the base spreading resistance, r bb, (the bulk resistance between the base contact and the active region of the base under the emitter) and r b′e (representing the base current required to make up for recombination of minority carriers in the base region) can be represented separately.
The transistor continuously monitors V diff and adjusts its emitter voltage to equal V in minus the mostly constant V BE (approximately one diode forward voltage drop) by passing the collector current through the emitter resistor R E. As a result, the output voltage follows the input voltage variations from V BE up to V +; hence the name ...
2. The Early voltage (V A) as seen in the output-characteristic plot of a BJT. The Early effect, named after its discoverer James M. Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector
This circuit applies only at frequencies low enough that the transistor parasitic capacitances do not matter. The figure shows the original cascode (Fig. 1) and the equivalent voltage amplifier or g-equivalent two-port (Fig. 4). The equivalent circuit allows easier calculations of the behavior of the circuit for different drivers and loads.
Johnson's figure of merit is a measure of suitability of a semiconductor material for high frequency power transistor applications and requirements. More specifically, it is the product of the charge carrier saturation velocity in the material and the electric breakdown field under same conditions, first proposed by Edward O. Johnson of RCA in 1965.
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