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The IGBT accounts for 27% of the power transistor market, second only to the power MOSFET (53%), and ahead of the RF amplifier (11%) and bipolar junction transistor (9%). [35] The IGBT is widely used in consumer electronics, industrial technology, the energy sector, aerospace electronic devices, and transportation.
An IGCT is a special type of thyristor. It is made of the integration of the gate unit with the Gate Commutated Thyristor (GCT) wafer device. The close integration of the gate unit with the wafer device ensures fast commutation of the conduction current from the cathode to the gate. The wafer device is similar to a gate turn-off thyristor (GTO).
The thyristor dominated the FACTs and HVDC world until the late 20th century, when the IGBT began to match its power ratings. [9] With the IGBT, the first voltage-sourced converters and STATCOMs began to enter the FACTs world. A prototype 1 MVAr STATCOM was described in a report by Empire State Electric Energy Research Corporation in 1987. [10]
A thyristor (/ θ aɪ ˈ r ɪ s t ər /, from a combination of Greek language θύρα, meaning "door" or "valve", and transistor [1]) is a solid-state semiconductor device which can be thought of as being a highly robust and switchable diode, allowing the passage of current in one direction but not the other, often under control of a gate electrode, that is used in high power applications ...
A minority carrier device (e.g., a thyristor, a bipolar transistor, an IGBT, etc.); this uses both majority and minority carriers (i.e., electrons and electron holes). A majority carrier device is faster, but the charge injection of minority carrier devices allows for better on-state performance.
A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power (e.g. 1200 V AC) semiconductor device. It was invented by General Electric . [ 1 ] GTOs, as opposed to normal thyristors, are fully controllable switches which can be turned on and off by their gate lead.
The IGBT accounts for 27% of the power transistor market, second only to the power MOSFET (53%), and ahead of the RF amplifier (11%) and bipolar junction transistor (9%). [235] The IGBT is widely used in consumer electronics , industrial technology , the energy sector , aerospace electronic devices, and transportation.
An HVDC thyristor valve tower 16.8 m tall in a hall at Baltic Cable AB in Sweden A battery charger is an example of a piece of power electronics. Power grid designer in front of a newly installed 880kV thyristor valve array A PCs power supply is an example of a piece of power electronics, whether inside or outside of the cabinet.