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English: Circuit diagram of an SRAM cell, built with six MOSFETs. The bulk connection of all transistors is to ground, but is not shown from simplicity. The bulk connection of all transistors is to ground, but is not shown from simplicity.
On August 18, 2008, AMD, Freescale, IBM, STMicroelectronics, Toshiba, and the College of Nanoscale Science and Engineering (CNSE) announced that they jointly developed and manufactured a 22 nm SRAM cell, built on a traditional six-transistor design on a 300 mm wafer, which had a memory cell size of just 0.1 μm 2. [7]
Two additional access transistors serve to control the access to a storage cell during read and write operations. 6T SRAM is the most common kind of SRAM. [20] In addition to 6T SRAM, other kinds of SRAM use 4, 5, 7, [ 21 ] 8, 9, [ 20 ] 10 [ 22 ] (4T, 5T, 7T 8T, 9T, 10T SRAM), or more transistors per bit.
SRAM became an alternative to magnetic-core memory, but required six MOS transistors for each bit of data. [21] Commercial use of SRAM began in 1965, when IBM introduced their SP95 SRAM chip for the System/360 Model 95. [9] Toshiba introduced bipolar DRAM memory cells for its Toscal BC-1411 electronic calculator in 1965.
SRAM typically has six-transistor cells, whereas DRAM (dynamic random-access memory) typically has single-transistor cells. [ 17 ] [ 15 ] In 1965, Toshiba 's Toscal BC-1411 electronic calculator used a form of capacitive bipolar DRAM, storing 180-bit data on discrete memory cells, consisting of germanium bipolar transistors and capacitors.
The use of semiconductor RAM dates back to 1965 when IBM introduced the monolithic (single-chip) 16-bit SP95 SRAM chip for their System/360 Model 95 computer, and Toshiba used bipolar DRAM memory cells for its 180-bit Toscal BC-1411 electronic calculator, both based on bipolar transistors.
The 2021 IRDS Lithography standard is a retrospective document, as the first volume production of a "7 nm" branded process was in 2016 with Taiwan Semiconductor Manufacturing Company's production of 256Mbit SRAM memory chips using a "7nm" process called N7. [2]
1T-SRAM is a pseudo-static random-access memory (PSRAM) technology introduced by MoSys, Inc. in September 1998, which offers a high-density alternative to traditional static random-access memory (SRAM) in embedded memory applications.