Search results
Results from the WOW.Com Content Network
Germanium is created by stellar nucleosynthesis, mostly by the s-process in asymptotic giant branch stars. The s-process is a slow neutron capture of lighter elements inside pulsating red giant stars. [57] Germanium has been detected in some of the most distant stars [58] and in the atmosphere of Jupiter. [59]
The first working transistor was a point-contact transistor invented by John Bardeen, Walter Houser Brattain, and William Shockley at Bell Labs in 1947. Shockley had earlier theorized a field-effect amplifier made from germanium and silicon, but he failed to build such a working device, before eventually using germanium to invent the point ...
A stylized replica of the point-contact transistor invented at Bell Labs on December 23, 1947. The point-contact transistor was the first type of transistor to be successfully demonstrated. It was developed by research scientists John Bardeen and Walter Brattain at Bell Laboratories in December 1947.
Germanium was initially considered the more effective semiconductor material, as it was able to demonstrate better performance due to higher carrier mobility. [ 31 ] [ 32 ] The relative lack of performance in early silicon semiconductors was due to electrical conductivity being limited by unstable quantum surface states , [ 33 ] preventing ...
Germanium's sensitivity to temperature also limited its usefulness. Scientists theorized that silicon would be easier to fabricate, but few investigated this possibility. Former Bell Labs scientist Gordon K. Teal was the first to develop a working silicon transistor at the nascent Texas Instruments , giving it a technological edge.
The export of gallium, germanium, antimony and other “super hard” materials will not be permitted because they may be used for military purposes, according to the ministry. ... Why Tesla stock ...
Gallium and germanium are used in semiconductors, while germanium is also used in infrared technology, fibre optic cables and solar cells. Antimony is used in bullets and other weaponry, while ...
The first bipolar junction transistors were invented by Bell Labs' William Shockley, who applied for patent (2,569,347) on June 26, 1948. On April 12, 1950, Bell Labs chemists Gordon Teal and Morgan Sparks successfully produced a working bipolar NPN junction amplifying germanium transistor. Bell announced the discovery of this new "sandwich ...