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  2. Silicon dioxide - Wikipedia

    en.wikipedia.org/wiki/Silicon_dioxide

    Because silicon dioxide is a native oxide of silicon it is more widely used compared to other semiconductors like gallium arsenide or indium phosphide. Silicon dioxide could be grown on a silicon semiconductor surface. [46] Silicon oxide layers could protect silicon surfaces during diffusion processes, and could be used for diffusion masking ...

  3. Thermal oxidation - Wikipedia

    en.wikipedia.org/wiki/Thermal_oxidation

    In microfabrication, thermal oxidation is a way to produce a thin layer of oxide (usually silicon dioxide) on the surface of a wafer. The technique forces an oxidizing agent to diffuse into the wafer at high temperature and react with it. The rate of oxide growth is often predicted by the Deal–Grove model. [1]

  4. Silicon oxide - Wikipedia

    en.wikipedia.org/wiki/Silicon_oxide

    Silicon oxide may refer to either of the following: Silicon dioxide or quartz, SiO 2, very well characterized; Silicon monoxide, ...

  5. Gate oxide - Wikipedia

    en.wikipedia.org/wiki/Gate_oxide

    The insulating silicon dioxide layer is formed through a process of self-limiting oxidation, which is described by the Deal–Grove model. A conductive gate material is subsequently deposited over the gate oxide to form the transistor. The gate oxide serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm transverse ...

  6. High-κ dielectric - Wikipedia

    en.wikipedia.org/wiki/High-κ_dielectric

    Silicon dioxide (SiO 2) has been used as a gate oxide material for decades. As metal–oxide–semiconductor field-effect transistors (MOSFETs) have decreased in size, the thickness of the silicon dioxide gate dielectric has steadily decreased to increase the gate capacitance (per unit area) and thereby drive current (per device width), raising device performance.

  7. Silicon–oxygen bond - Wikipedia

    en.wikipedia.org/wiki/Silicon–oxygen_bond

    Silicon–oxygen single bonds are longer (1.6 vs 1.4 Å) but stronger (452 vs. about 360 kJ mol −1) than carbon–oxygen single bonds. [1] However, silicon–oxygen double bonds are weaker than carbon–oxygen double bonds (590 vs. 715 kJ mol −1) due to a better overlap of p orbitals forming a stronger pi bond in the latter.

  8. Silicon - Wikipedia

    en.wikipedia.org/wiki/Silicon

    Upon melting, silicon becomes extremely reactive, alloying with most metals to form silicides, and reducing most metal oxides because the heat of formation of silicon dioxide is so large. In fact, molten silicon reacts virtually with every known kind of crucible material (except its own oxide, SiO 2).

  9. Hydrophobic silica - Wikipedia

    en.wikipedia.org/wiki/Hydrophobic_silica

    Hydrophobic silica is a form of silicon dioxide (commonly known as silica) that has hydrophobic groups chemically bonded to the surface. The hydrophobic groups are normally alkyl or polydimethylsiloxane chains.

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