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Zone melting (or zone refining, or floating-zone method, or floating-zone technique) is a group of similar methods of purifying crystals, in which a narrow region of a crystal is melted, and this molten zone is moved through the crystal. The molten region melts impure solid at its forward edge and leaves a wake of purer material solidified ...
William Gardner Pfann (October 27, 1917 – October 22, 1982) was an inventor and materials scientist with Bell Labs.Pfann is known for his development of zone melting which is essential to the semiconductor industry.
In chemistry, fractional crystallization is a stage-wise separation technique that relies on the liquid–solid phase change. This technique fractionates via differences in crystallization temperature and enables the purification of multi-component mixtures, as long as none of the constituents can act as solvents to the others.
Float-zone silicon is very pure silicon obtained by vertical zone melting. The process was developed at Bell Labs by Henry Theuerer in 1955 as a modification of a method developed by William Gardner Pfann for germanium. In the vertical configuration molten silicon has sufficient surface tension to keep the charge from separating.
Fractional freezing is a process used in process engineering and chemistry to separate substances with different melting points. It can be done by partial melting of a solid, for example in zone refining of silicon or metals, or by partial crystallization of a liquid, as in freeze distillation, also called normal freezing or progressive freezing.
Crystallization is the process by which solids form, where the atoms or molecules are highly organized into a structure known as a crystal.Some ways by which crystals form are precipitating from a solution, freezing, or more rarely deposition directly from a gas.
Fractional crystallization is the removal and segregation from a melt of mineral precipitates; except in special cases, removal of the crystals changes the composition of the magma. [2]
The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones.