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  2. Fermi level - Wikipedia

    en.wikipedia.org/wiki/Fermi_level

    The Fermi level does not necessarily correspond to an actual energy level (in an insulator the Fermi level lies in the band gap), nor does it require the existence of a band structure. Nonetheless, the Fermi level is a precisely defined thermodynamic quantity, and differences in Fermi level can be measured simply with a voltmeter.

  3. Quasi Fermi level - Wikipedia

    en.wikipedia.org/wiki/Quasi_Fermi_level

    When a semiconductor is in thermal equilibrium, the distribution function of the electrons at the energy level of E is presented by a Fermi–Dirac distribution function. In this case the Fermi level is defined as the level in which the probability of occupation of electron at that energy is 1 ⁄ 2.

  4. Electronic band structure - Wikipedia

    en.wikipedia.org/wiki/Electronic_band_structure

    µ is the total chemical potential of electrons, or Fermi level (in semiconductor physics, this quantity is more often denoted E F). The Fermi level of a solid is directly related to the voltage on that solid, as measured with a voltmeter. Conventionally, in band structure plots the Fermi level is taken to be the zero of energy (an arbitrary ...

  5. Semiconductor - Wikipedia

    en.wikipedia.org/wiki/Semiconductor

    When ionizing radiation strikes a semiconductor, it may excite an electron out of its energy level and consequently leave a hole. This process is known as electron-hole pair generation . Electron-hole pairs are constantly generated from thermal energy as well, in the absence of any external energy source.

  6. Field effect (semiconductor) - Wikipedia

    en.wikipedia.org/wiki/Field_effect_(semiconductor)

    The example in the figure shows the Fermi level in the bulk material beyond the range of the applied field as lying close to the valence band edge. This position for the occupancy level is arranged by introducing impurities into the semiconductor.

  7. Metal–semiconductor junction - Wikipedia

    en.wikipedia.org/wiki/Metal–semiconductor_junction

    Shown is the graphical definition of the Schottky barrier height, Φ B, for an n-type semiconductor as the difference between the interfacial conduction band edge E C and Fermi level E F. Whether a given metal-semiconductor junction is an ohmic contact or a Schottky barrier depends on the Schottky barrier height, Φ B, of the junction.

  8. MOSFET - Wikipedia

    en.wikipedia.org/wiki/MOSFET

    This can be seen on a band diagram. The Fermi level defines the type of semiconductor in discussion. If the Fermi level is equal to the Intrinsic level, the semiconductor is of intrinsic, or pure type. If the Fermi level lies closer to the conduction band (valence band) then the semiconductor type will be of n-type (p-type).

  9. Moss–Burstein effect - Wikipedia

    en.wikipedia.org/wiki/Moss–Burstein_effect

    In the case of a degenerate semiconductor, an electron from the top of the valence band can only be excited into conduction band above the Fermi level (which now lies in conduction band) since all the states below the Fermi level are occupied states. Pauli's exclusion principle forbids excitation into these occupied states. Thus we observe an ...