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A second performance advantage relates to the 3T1C cell's separate transistors for reading and writing; the memory controller can exploit this feature to perform atomic read-modify-writes, where a value is read, modified, and then written back as a single, indivisible operation (Jacob, p. 459).
The maximum random access memory (RAM) installed in any computer system is limited by hardware, software and economic factors. The hardware may have a limited number of address bus bits, limited by the processor package or design of the system. Some of the address space may be shared between RAM, peripherals, and read-only memory.
The ordering, however, depends on the requested address, and the configured burst type option: sequential or interleaved. Typically, a memory controller will require one or the other. When the burst length is one or two, the burst type does not matter. For a burst length of one, the requested word is the only word accessed.
Prior to the development of integrated read-only memory (ROM) circuits, permanent (or read-only) random-access memory was often constructed using diode matrices driven by address decoders, or specially wound core rope memory planes. [citation needed] Semiconductor memory appeared in the 1960s with bipolar memory, which used bipolar transistors ...
The time to read the first bit of memory from a DRAM without an active row is T RCD + CL. Row Precharge Time T RP: The minimum number of clock cycles required between issuing the precharge command and opening the next row. The time to read the first bit of memory from a DRAM with the wrong row open is T RP + T RCD + CL. Row Active Time T RAS
For example, an IBM PC with an Intel 80486 CPU running at 50 MHz will be about twice as fast (internally only) as one with the same CPU and memory running at 25 MHz, while the same will not be true for MIPS R4000 running at the same clock rate as the two are different processors that implement different architectures and microarchitectures ...
Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...
RAM (Random-access memory) – This has become a generic term for any semiconductor memory that can be written to, as well as read from, in contrast to ROM (below), which can only be read. All semiconductor memory, not just RAM, has the property of random access. DRAM (Dynamic random-access memory) – This uses memory cells consisting of one ...