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Another potential problem is that filament degradation in the electron gun results in a non-uniform evaporation rate. However, when vapor deposition is performed at pressures of roughly 10 −4 Torr (1.3 × 10 −4 hPa) or higher, significant scattering of the vapor cloud takes place such that surfaces not in sight of the source can be coated ...
Evaporative deposition: the material to be deposited is heated to a high vapor pressure by electrical resistance heating in "high" vacuum. [4] [5] Close-space sublimation, the material, and substrate are placed close to one another and radiatively heated. Pulsed laser deposition: a high-power laser ablates material from the target into a vapor.
Plasma (argon-only on the left, argon and silane on the right) inside a prototype LEPECVD reactor at the LNESS laboratory in Como, Italy.. Low-energy plasma-enhanced chemical vapor deposition (LEPECVD) is a plasma-enhanced chemical vapor deposition technique used for the epitaxial deposition of thin semiconductor (silicon, germanium and SiGe alloys) films.
Electron-beam machining is a process in which high-velocity electrons are concentrated into a narrow beam with a very high planar power density. The beam cross-section is then focused and directed toward the work piece, creating heat and vaporizing the material. Electron-beam machining can be used to accurately cut or bore a wide variety of metals.
Electron-beam-induced deposition (EBID) is a process of decomposing gaseous molecules by an electron beam leading to deposition of non-volatile fragments onto a nearby substrate. The electron beam is usually provided by a scanning electron microscope , which results in high spatial accuracy (potentially below one nanometer) and the possibility ...
Topological insulators can be grown using different methods such as metal-organic chemical vapor deposition (MOCVD), [67] physical vapor deposition (PVD), [68] solvothermal synthesis, [69] sonochemical technique [70] and molecular beam epitaxy. Schematic of the components of a MBE system (MBE). [34] MBE has so far been the most common ...
When the vapor source is a liquid or solid, the process is called physical vapor deposition (PVD), [3] which is used in semiconductor devices, thin-film solar panels, and glass coatings. [4] When the source is a chemical vapor precursor, the process is called chemical vapor deposition (CVD). The latter has several variants: low-pressure ...
The main ionisation mechanism is electron impact, which is balanced by charge exchange, diffusion, and plasma ejection in flares. The ionisation rates depend on the plasma density. The ionisation degree of the metal vapour is a strong function of the peak current density of the discharge.