Search results
Results from the WOW.Com Content Network
Another potential problem is that filament degradation in the electron gun results in a non-uniform evaporation rate. However, when vapor deposition is performed at pressures of roughly 10 −4 Torr (1.3 × 10 −4 hPa) or higher, significant scattering of the vapor cloud takes place such that surfaces not in sight of the source can be coated ...
Evaporative deposition: the material to be deposited is heated to a high vapor pressure by electrical resistance heating in "high" vacuum. [4] [5] Close-space sublimation, the material, and substrate are placed close to one another and radiatively heated. Pulsed laser deposition: a high-power laser ablates material from the target into a vapor.
Plasma (argon-only on the left, argon and silane on the right) inside a prototype LEPECVD reactor at the LNESS laboratory in Como, Italy.. Low-energy plasma-enhanced chemical vapor deposition (LEPECVD) is a plasma-enhanced chemical vapor deposition technique used for the epitaxial deposition of thin semiconductor (silicon, germanium and SiGe alloys) films.
Electron-beam machining is a process in which high-velocity electrons are concentrated into a narrow beam with a very high planar power density. The beam cross-section is then focused and directed toward the work piece, creating heat and vaporizing the material. Electron-beam machining can be used to accurately cut or bore a wide variety of metals.
Topological insulators can be grown using different methods such as metal-organic chemical vapor deposition (MOCVD), [67] physical vapor deposition (PVD), [68] solvothermal synthesis, [69] sonochemical technique [70] and molecular beam epitaxy. Schematic of the components of a MBE system (MBE). [34] MBE has so far been the most common ...
In chemistry, a precursor is a compound that contributes in a chemical reaction and produces another compound, or a chemical substance that gives rise to another more significant chemical product. Since several years metal-organic compounds are widely used as molecular precursors for the chemical vapor deposition process (MOCVD).
The peak power and the duty cycle are selected so as to maintain an average cathode power similar to conventional sputtering (1–10 W⋅cm −2). HIPIMS is used for: adhesion enhancing pretreatment of the substrate prior to coating deposition (substrate etching) deposition of thin films with high microstructure density
Low-energy electron diffraction (LEED) is a technique for the determination of the surface structure of single-crystalline materials by bombardment with a collimated beam of low-energy electrons (30–200 eV) [1] and observation of diffracted electrons as spots on a fluorescent screen.