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Float-zone silicon is very pure silicon obtained by vertical zone melting. The process was developed at Bell Labs by Henry Theuerer in 1955 as a modification of a method developed by William Gardner Pfann for germanium. In the vertical configuration molten silicon has sufficient surface tension to keep the charge from
Zone melting (or zone refining, or floating-zone method, or floating-zone technique) is a group of similar methods of purifying crystals, in which a narrow region of a crystal is melted, and this molten zone is moved along the crystal. The molten region melts impure solid at its forward edge and leaves a wake of purer material solidified behind ...
Therefore, microprocessor fabricators have invested heavily in facilities to produce large single crystals of silicon. The Czochralski method and floating zone are popular methods for the growth of Silicon crystals. [17] Fluorescence of (9H-carbazol-9-yl)(4-chlorophenyl)methanone single crystal.
Monocrystalline silicon (mono-Si) grown by the Czochralski method is often referred to as monocrystalline Czochralski silicon (Cz-Si). It is the basic material in the production of integrated circuits used in computers, TVs, mobile phones and all types of electronic equipment and semiconductor devices. [6]
Laser-heated pedestal growth (LHPG) or laser floating zone (LFZ) is a crystal growth technique. A narrow region of a crystal is melted with a powerful CO2 or YAG laser. The laser and hence the floating zone, is moved along the crystal. The molten region melts impure solid at its forward edge and leaves a wake of purer material solidified behind it.
The methods involve heating polycrystalline material above its melting point and slowly cooling it from one end of its container, where a seed crystal is located. A single crystal of the same crystallographic orientation as the seed material is grown on the seed and is progressively formed along the length of the container.
The string ribbon method, also known as dendritic web or edge-supported pulling, has been used to grow semiconductor sheets including indium antimonide, gallium arsenide, germanium, and silicon. [13] A seed crystal with the width and thickness matching the sheet to be grown is dipped into the top surface of the melt.
Most true synthetic alexandrite is grown by the Czochralski method, known as “pulling”.Another method is a “floating zone”, developed in 1964 by an Armenian scientist Khachatur Saakovich Bagdasarov, of the Russian (former Soviet) Institute of Crystallography, Moscow.