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A memristor (/ ˈ m ɛ m r ɪ s t ər /; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage.It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which also comprises the resistor, capacitor and inductor.
Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.
While the memristor is defined in terms of a two-terminal circuit element, there was an implementation of a three-terminal device called a memistor developed by Bernard Widrow in 1960. Memistors formed basic components of a neural network architecture called ADALINE developed by Widrow. [1] [2] The memistor was also used in MADALINE.
VRAM (Video random access memory) – An older type of dual-ported memory once used for the frame buffers of video adapters (video cards). SDRAM (Synchronous dynamic random-access memory) – This added circuitry to the DRAM chip which synchronizes all operations with a clock signal added to the computer's memory bus.
The main determinant of a memory system's cost is the density of the components used to make it up. Smaller components, and fewer of them, mean that more "cells" can be packed onto a single chip, which in turn means more can be produced at once from a single silicon wafer.
Phase-change memory devices based on germanium, antimony and tellurium present manufacturing challenges, since etching and polishing of the material with chalcogens can change the material's composition.
The Williams tube works by displaying a grid of dots on a cathode-ray tube (CRT). Due to the way CRTs work, this creates a small charge of static electricity over each dot. The charge at the location of each of the dots is read by a thin metal sheet just in front of the display.
To read or clear words, the full current is applied to one or more word read lines; this clears the selected cores and any that flip induce voltage pulses in their bit sense/write lines. For read, normally only one word read line would be selected; but for clear, multiple word read lines could be selected while the bit sense/write lines ignored.