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Band-gap engineering is the process of controlling or altering the band gap of a material by controlling the composition of certain semiconductor alloys, such as GaAlAs, InGaAs, and InAlAs. It is also possible to construct layered materials with alternating compositions by techniques like molecular-beam epitaxy.
In a semiconductor or band insulator, the Fermi level is surrounded by a band gap, referred to as the band gap (to distinguish it from the other band gaps in the band structure). The closest band above the band gap is called the conduction band, and the closest band beneath the band gap is called the valence band.
The band gap (usually given the symbol ) gives the energy difference between the lower edge of the conduction band and the upper edge of the valence band. Each semiconductor has different electron affinity and band gap values. For semiconductor alloys it may be necessary to use Vegard's law to calculate these values.
Although silicon's (Si) band gap at 0 K is technically 1.165 eV, the circuit essentially linearly extrapolates the bandgap–temperature curve [7] to determine a slightly higher but precise reference around 1.2–1.3 V (the specific value depends on the particular technology and circuit design); the remaining voltage change over the operating ...
For superconductors the energy gap is a region of suppressed density of states around the Fermi energy, with the size of the energy gap much smaller than the energy scale of the band structure. The superconducting energy gap is a key aspect in the theoretical description of superconductivity and thus features prominently in BCS theory.
Here is the effective mass of the electrons in that particular semiconductor, and the quantity is the difference in energy between the conduction band and the Fermi level, which is half the band gap, : = ()
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Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.