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Gallium(III) oxide is an inorganic compound and ultra-wide-bandgap semiconductor with the formula Ga 2 O 3. It is actively studied for applications in power electronics, phosphors, and gas sensing. [5] [6] [7] The compound has several polymorphs, of which the monoclinic β-phase is the most stable.
At room temperature, gallium metal is not reactive with air and water because it forms a passive, protective oxide layer. At higher temperatures, however, it reacts with atmospheric oxygen to form gallium(III) oxide, Ga 2 O 3. [4] Reducing Ga 2 O 3 with elemental gallium in vacuum at 500 °C to 700 °C yields the dark brown gallium(I) oxide, Ga ...
Although buying nitrous oxide for its intended purpose is legal, some states have outlawed the gas if it's being used recreationally. In California, it is a misdemeanor to use or possess nitrous ...
Gallium oxide may refer to Gallium(I) oxide, Ga 2 O; Gallium(III) oxide, Ga 2 O 3 This page was last edited on 8 September 2020, at 13:36 (UTC). Text is available ...
The process by which adsorption and desorption on metal oxide surfaces takes place is related to the photo generation of holes on the solid surface, which are believed to be trapped by hydroxyl groups on the surface of a transition metal oxides. [22] [23] These trapped holes allow photo-excited electrons to be available for chemisorption. [23]
First, self-trapped exciton states are always of a small radius, of the order of lattice constant, due to their electric neutrality. Second, there exists a self-trapping barrier separating free and self-trapped states, hence, free excitons are metastable. Third, this barrier enables coexistence of free and self-trapped states of excitons.
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Gallium(I) oxide is a brown-black diamagnetic solid which is resistant to further oxidation in dry air. It starts decomposing upon heating at temperatures above 500 °C, and the decomposition rate depends on the atmosphere (vacuum, inert gas, air).