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Electroless nickel-boron plating developed as a variant of the similar nickel-phosphorus process, discovered accidentally by Charles Adolphe Wurtz in 1844. [2]In 1969, Harold Edward Bellis from DuPont filed a patent for a general class of electroless plating processes using sodium borohydride, dimethylamine borane, or sodium hypophosphite, in the presence of thallium salts, thus producing a ...
Nickel boride is the common name of materials composed chiefly of the elements nickel and boron that are widely used as catalysts in organic chemistry. [1] [2] Their approximate chemical composition is Ni 2.5 B, [3] and they are often incorrectly denoted "Ni 2 B" in organic chemistry publications.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
Dinickel boride can be obtained (together with other nickel borides) by heating sodium borohydride with powdered nickel metal up to 670 °C in a closed vessel, so that the released hydrogen creates a pressure of up to 3.4 MPa. The main reactions can be summarized as 2 NaBH 4 ↔ 2NaH + B 2 H 6 2Ni + 2 B 2 H 6 + NaH ↔ Ni 2 B + 3 BH 3 + 2 H 2 + Na
Electroless deposition is an important process in the electronic industry for metallization of substrates. Other metallization of substrates also include physical vapor deposition (PVD), chemical vapor deposition (CVD), and electroplating which produce thin metal films but require high temperature, vacuum, and a power source respectively. [19]
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[1] [2] The most common example of compounds with 13/15 group multiple bonds are those with B=N units. The boron-nitrogen-hydride compounds are candidates for hydrogen storage. [3] [4] [5] In contrast, multiple bonding between aluminium and nitrogen Al=N, Gallium and nitrogen (Ga=N), boron and phosphorus (B=P), or boron and arsenic (B=As) are ...
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