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  2. p–n junction - Wikipedia

    en.wikipedia.org/wiki/P–n_junction

    PN junction operation in forward-bias mode, showing reducing depletion width. In forward bias, the p-type is connected with a positive electrical terminal and the n-type is connected with a negative terminal. The panels show energy band diagram, electric field, and net charge density. The built-in potential of the semiconductor varies ...

  3. Band diagram - Wikipedia

    en.wikipedia.org/wiki/Band_diagram

    Band diagram for Schottky barrier at equilibrium Band diagram for semiconductor heterojunction at equilibrium. In solid-state physics of semiconductors, a band diagram is a diagram plotting various key electron energy levels (Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted x. [1]

  4. File:Bjt forward active bands.svg - Wikipedia

    en.wikipedia.org/wiki/File:Bjt_forward_active...

    is the w:conduction band, indicates the quasi-w:fermi energy levels, is the intrinsic Fermi level of the undoped semiconductor, and is the w:valence band. This band alignment is due to the biasing conditions that correspond with forward-active mode; forward bias on the emitter-base junction and reverse bias on the base-collector junction.

  5. Band bending - Wikipedia

    en.wikipedia.org/wiki/Band_bending

    Band bending can be induced by several types of contact. In this section metal-semiconductor contact, surface state, applied bias and adsorption induced band bending are discussed. Figure 1: Energy band diagrams of the surface contact between metals and n-type semiconductors.

  6. p–n diode - Wikipedia

    en.wikipedia.org/wiki/P–n_diode

    As shown in the diagram, the step in band edges is reduced by the applied voltage to . (The band bending diagram is made in units of volts, so no electron charge appears to convert to energy.) Under forward bias, a diffusion current flows (that is a current driven by a concentration gradient) of holes from the p-side into the n-side, and of ...

  7. Depletion region - Wikipedia

    en.wikipedia.org/wiki/Depletion_region

    A PN junction in forward bias mode, the depletion width decreases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59V. Observe the different Quasi Fermi levels for conduction band and valence band in n and p regions (red curves). A depletion region forms instantaneously across a p–n junction.

  8. Light-emitting diode physics - Wikipedia

    en.wikipedia.org/wiki/Light-emitting_diode_physics

    The reverse bias region uses a different vertical scale from the forward bias region to show that the leakage current is nearly constant with voltage until breakdown occurs. In forward bias, the current starts small but increases exponentially with voltage. The wavelength of the light emitted, and thus its color, depends on the band gap energy ...

  9. Electronic band structure - Wikipedia

    en.wikipedia.org/wiki/Electronic_band_structure

    Horizontal lines represent energy levels, while blocks represent energy bands. When the horizontal lines in these diagram are slanted then the energy of the level or band changes with distance. Diagrammatically, this depicts the presence of an electric field within the crystal system. Band diagrams are useful in relating the general band ...