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  2. Copper interconnects - Wikipedia

    en.wikipedia.org/wiki/Copper_interconnects

    Copper interconnects are used in integrated circuits to reduce propagation delays and power consumption. Since copper is a better conductor than aluminium , ICs using copper for their interconnects can have interconnects with narrower dimensions, and use less energy to pass electricity through them.

  3. Interconnect (integrated circuits) - Wikipedia

    en.wikipedia.org/wiki/Interconnect_(integrated...

    Global interconnects can transmit further, such as over large-area sub-circuits. Consequently, local interconnects may be formed from materials with relatively high electrical resistivity such as polycrystalline silicon (sometimes silicided to extend its range) or tungsten. To extend the distance an interconnect may reach, various circuits such ...

  4. Thermal copper pillar bump - Wikipedia

    en.wikipedia.org/wiki/Thermal_copper_pillar_bump

    The thermal copper pillar bump, also known as the "thermal bump", is a thermoelectric device made from thin-film thermoelectric material embedded in flip chip interconnects (in particular copper pillar solder bumps) for use in electronics and optoelectronic packaging, including: flip chip packaging of CPU and GPU integrated circuits (chips), laser diodes, and semiconductor optical amplifiers ...

  5. Via (electronics) - Wikipedia

    en.wikipedia.org/wiki/Via_(electronics)

    A via (Latin, 'path' or 'way') is an electrical connection between two or more metal layers of a printed circuit boards (PCB) or integrated circuit. Essentially a via is a small drilled hole that goes through two or more adjacent layers; the hole is plated with metal (often copper) that forms an electrical connection through the insulating layers.

  6. Wire bonding - Wikipedia

    en.wikipedia.org/wiki/Wire_bonding

    Copper wire has become one of the preferred materials for wire bonding interconnects in many semiconductor and microelectronic applications. Copper is used for fine wire ball bonding in sizes from 10 micrometers (0.00039 in) up to 75 micrometers (0.003 in). [ 6 ]

  7. Back end of line - Wikipedia

    en.wikipedia.org/wiki/Back_end_of_line

    The BEOL process deposits metalization layers on the silicion to interconnect the individual devices generated during FEOL (bottom). CMOS fabrication process. Back end of the line or back end of line (BEOL) is a process in semiconductor device fabrication that consists of depositing metal interconnect layers onto a wafer already patterned with devices.

  8. ESI Revolutionizes Flexible Circuit and Interconnect ...

    www.aol.com/2013/03/05/esi-revolutionizes...

    The article ESI Revolutionizes Flexible Circuit and Interconnect Processing with its New Model 5335 originally appeared on Fool.com. Try any of our Foolish newsletter services free for 30 days .

  9. Electromigration - Wikipedia

    en.wikipedia.org/wiki/Electromigration

    In narrow interconnect conductors, such as those linking transistors and other components in integrated circuits, this is known as a void or internal failure (open circuit). Electromigration can also cause the atoms of a conductor to pile up and drift toward other nearby conductors, creating an unintended electrical connection known as a ...

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