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In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pushed or pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility.
In solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices , such as photodiodes , light ...
In semiconductor lasers, the carrier lifetime is the time it takes an electron before recombining via non-radiative processes in the laser cavity. In the frame of the rate equations model, carrier lifetime is used in the charge conservation equation as the time constant of the exponential decay of carriers.
Specifically, it is used to evaluate a proxy for charge carrier mobility and a representative carrier lifetime from light-induced changes in conductance. The technique works by photo-generating electrons and holes in a semiconductor, allowing these charge carriers to move under a microwave field, and detecting the resulting changes in the ...
Generally, the carrier mobility μ depends on temperature T, on the applied electric field E, and the concentration of localized states N. Depending on the model, increased temperature may either increase or decrease carrier mobility, applied electric field can increase mobility by contributing to thermal ionization of trapped charges, and ...
The Monte Carlo method for electron transport is a semiclassical Monte Carlo (MC) approach of modeling semiconductor transport. Assuming the carrier motion consists of free flights interrupted by scattering mechanisms, a computer is utilized to simulate the trajectories of particles as they move across the device under the influence of an electric field using classical mechanics.
When this happens, the semiconductor is said to be in a state of velocity saturation. [2] Charge carriers normally move at an average drift speed proportional to the electric field strength they experience temporally. The proportionality constant is known as mobility of the carrier, which is a material property
0.53 As approaches 10 × 10 3 cm 2 ·V −1 ·s −1, which is the largest of any technologically important semiconductor, although significantly less than that for graphene. The mobility is proportional to the carrier conductivity. As mobility increases, so does the current-carrying capacity of transistors.