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Therefore mobility is a very important parameter for semiconductor materials. Almost always, higher mobility leads to better device performance, with other things equal. Semiconductor mobility depends on the impurity concentrations (including donor and acceptor concentrations), defect concentration, temperature, and electron and hole ...
In semiconductor lasers, the carrier lifetime is the time it takes an electron before recombining via non-radiative processes in the laser cavity. In the frame of the rate equations model , carrier lifetime is used in the charge conservation equation as the time constant of the exponential decay of carriers.
The carrier density is important for semiconductors, where it is an important quantity for the process of chemical doping.Using band theory, the electron density, is number of electrons per unit volume in the conduction band.
The mobility is nearly independent of temperature between 10 K and 100 K, [10] [11] [12] which implies that the dominant scattering mechanism is defect scattering. Scattering by graphene's acoustic phonons intrinsically limits room temperature mobility to 200 000 cm 2 ⋅V −1 ⋅s −1 at a carrier density of 10 12 cm −2 , [ 12 ] [ 13 ] 10 ...
Semiconductor characterization techniques are used to characterize a semiconductor material or device (p–n junction, Schottky diode, solar cell, etc.).Some examples of semiconductor properties that could be characterized include the depletion width, carrier concentration, carrier generation and recombination rates, carrier lifetimes, defect concentration, and trap states.
Diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (electrons and/or electron holes).This is the current which is due to the transport of charges occurring because of non-uniform concentration of charged particles in a semiconductor.
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
The proportionality constant is known as mobility of the carrier, which is a material property. A good conductor would have a high mobility value for its charge carrier, which means higher velocity, and consequently higher current values for a given electric field strength. There is a limit though to this process and at some high field value, a ...