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  2. Electron mobility - Wikipedia

    en.wikipedia.org/wiki/Electron_mobility

    Therefore mobility is a very important parameter for semiconductor materials. Almost always, higher mobility leads to better device performance, with other things equal. Semiconductor mobility depends on the impurity concentrations (including donor and acceptor concentrations), defect concentration, temperature, and electron and hole ...

  3. Charge carrier density - Wikipedia

    en.wikipedia.org/wiki/Charge_carrier_density

    The carrier density is important for semiconductors, where it is an important quantity for the process of chemical doping.Using band theory, the electron density, is number of electrons per unit volume in the conduction band.

  4. High-electron-mobility transistor - Wikipedia

    en.wikipedia.org/wiki/High-electron-mobility...

    The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.

  5. Diffusion current - Wikipedia

    en.wikipedia.org/wiki/Diffusion_current

    Diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (electrons and/or electron holes).This is the current which is due to the transport of charges occurring because of non-uniform concentration of charged particles in a semiconductor.

  6. Organic field-effect transistor - Wikipedia

    en.wikipedia.org/wiki/Organic_field-effect...

    The graph reveals that the mobility in polycrystalline OFETs is comparable to that of a-Si whereas mobility in rubrene-based OFETs (20–40 cm 2 /(V·s)) approaches that of best poly-silicon devices. [21] Development of accurate models of charge carrier mobility in OFETs is an active field of research.

  7. Carrier lifetime - Wikipedia

    en.wikipedia.org/wiki/Carrier_Lifetime

    In semiconductor lasers, the carrier lifetime is the time it takes an electron before recombining via non-radiative processes in the laser cavity. In the frame of the rate equations model , carrier lifetime is used in the charge conservation equation as the time constant of the exponential decay of carriers.

  8. Magnetoresistance - Wikipedia

    en.wikipedia.org/wiki/Magnetoresistance

    In a semiconductor with a single carrier type, the magnetoresistance is proportional to (1 + (μB) 2), where μ is the semiconductor mobility (units m 2 ·V −1 ·s −1, equivalently m 2 ·Wb −1, or T −1) and B is the magnetic field (units teslas).

  9. Saturation velocity - Wikipedia

    en.wikipedia.org/wiki/Saturation_velocity

    The proportionality constant is known as mobility of the carrier, which is a material property. A good conductor would have a high mobility value for its charge carrier, which means higher velocity, and consequently higher current values for a given electric field strength. There is a limit though to this process and at some high field value, a ...