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The specification defined standards for ×4, ×8 and ×16 memory devices with capacities of 2, 4, 8 and 16 Gbit. [1] [47] In addition to bandwidth and capacity variants, DDR4 modules can optionally implement: ECC, which is an extra data byte lane used for correcting minor errors and detecting major errors for better reliability. Modules with ...
DDR memory bus width per channel is 64 bits (72 for ECC memory). Total module bit width is a product of bits per chip and number of chips. It also equals number of ranks (rows) multiplied by DDR memory bus width. Consequently, a module with a greater number of chips or using ×8 chips instead of ×4 will have more ranks.
Dual-channel memory slots, color-coded orange and yellow for this particular motherboard. Dual-channel-enabled memory controllers in a PC system architecture use two 64-bit data channels. Dual-channel should not be confused with double data rate (DDR), in which data exchange happens twice per DRAM clock. The two technologies are independent of ...
With the introduction of the Intel 840 (Pentium III), Intel 850 (Pentium 4), Intel 860 (Pentium 4 Xeon) chipsets, Intel added support for dual-channel PC-800 RDRAM, doubling bandwidth to 3200 MB/s by increasing the bus width to 32 bits. This was followed in 2002 by the Intel 850E chipset, which introduced PC-1066 RDRAM, increasing total dual ...
A memory rank is a set of DRAM chips connected to the same chip select, which are therefore accessed simultaneously. In practice all DRAM chips share all of the other command and control signals, and only the chip select pins for each rank are separate (the data pins are shared across ranks).
The SK Hynix chips were expected to have a transfer rate of 14–16 Gbit/s. [4] The first graphics cards to use SK Hynix's GDDR6 RAM were expected to use 12 GB of RAM with a 384-bit memory bus, yielding a bandwidth of 768 GB/s. [3] SK Hynix began mass production in February 2018, with 8 Gbit chips and a data rate of 14 Gbit/s per pin. [14]
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