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Without an applied current pulse to the gate of the SCR, the SCR is left in its forward blocking state. This makes the start of conduction of the SCR controllable. The delay angle α, which is the instant the gate current pulse is applied with respect to the instant of natural conduction (ωt = 0), controls the start of conduction.
A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power (e.g. 1200 V AC) semiconductor device. It was invented by General Electric . [ 1 ] GTOs, as opposed to normal thyristors, are fully controllable switches which can be turned on and off by their gate lead.
low SCR: in case of a short circuit, the current is proportional to SCR, therefore generators with low SCR require less protection and thus are cheaper; low SCR allows shorter air gap and lower excitation field, both decreasing the size (an cost) of the generator; with low SCR the amounts of iron and copper are reduced, lowering the cost; high SCR:
A thyristor (/ θ aɪ ˈ r ɪ s t ər /, from a combination of Greek language θύρα, meaning "door" or "valve", and transistor [1]) is a solid-state semiconductor device which can be thought of as being a highly robust and switchable diode, allowing the passage of current in one direction but not the other, often under control of a gate electrode, that is used in high power applications ...
The device turns off when the anode voltage falls below a value (relative to the cathode) determined by the device characteristics. When off, it is considered a reverse voltage blocking device. [19] Gate turn-off thyristor (GTO) The gate turn-off thyristor, unlike an SCR, can be turned on and off with a gate pulse.
In particular, if the pulse width of the gate current is sufficiently large (generally some tens of microseconds), the TRIAC has completed the triggering process when the gate signal is discontinued and the latching current reaches a minimum level called holding current. Holding current is the minimum required current flowing between the two ...
The wafer device is similar to a gate turn-off thyristor (GTO). They can be turned on and off by a gate signal, and withstand higher rates of voltage rise (dv/dt), such that no snubber is required for most applications. The structure of an IGCT is very similar to a GTO thyristor. In an IGCT, the gate turn-off current is greater than the anode ...
The SCR can be calculated for each point on an electrical grid. A point on a grid having a number of machines with an SCR above a number between 1 and 1.5 has less vulnerability to voltage instability. Hence, such a grid is known strong grid or power system. A power system (grid) having a lower SCR has more vulnerability to grid voltage ...
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