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IRLZ24N Power MOSFET in a TO-220AB through-hole package. Pins from left to right are: gate (logic-level), drain, source. The top metal tab is the drain, same as pin 2. [1]A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.
The 2N7000 is housed in a TO92 package, with lead 1 connected as the source, lead 2 as the gate, and lead 3 as the drain. The BS170 has the source and drain leads interchanged. The 2N7002 variant is packaged in a TO-236 surface-mount package. The 2N7000 is an N-channel, enhancement-mode MOSFET used for low-power switching applications. [1]
The device consists of an active channel through which charge carriers, electrons or holes, flow from the source to the drain. Source and drain terminal conductors are connected to the semiconductor through ohmic contacts. The conductivity of the channel is a function of the potential applied across the gate and source terminals.
The source and drain (unlike the body) are highly doped as signified by a "+" sign after the type of doping. If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is ...
Top: source, bottom: drain, left: gate, right: bulk. Voltages that lead to channel formation are not shown. In field-effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an on state or an off state at zero gate–source voltage.
where I DSS is the saturation current at zero gate–source voltage, i.e. the maximum current that can flow through the FET from drain to source at any (permissible) drain-to-source voltage (see, e. g., the I–V characteristics diagram above).
This inversion layer, called the n-channel, can conduct electrons between n-type source and drain terminals. The n-channel is created by applying voltage to the third terminal, called the gate. Like other MOSFETs, nMOS transistors have four modes of operation: cut-off (or subthreshold), triode, saturation (sometimes called active), and velocity ...
Because resistance is proportional to length, shortening the channel decreases its resistance, causing an increase in current with increase in drain bias for a MOSFET operating in saturation. The effect is more pronounced the shorter the source-to-drain separation, the deeper the drain junction, and the thicker the oxide insulator.