Search results
Results from the WOW.Com Content Network
Charge carrier density, also known as carrier concentration, denotes the number of charge carriers per volume. In SI units, it is measured in m −3. As with any density, in principle it can depend on position. However, usually carrier concentration is given as a single number, and represents the average carrier density over the whole material.
Generally, the carrier mobility μ depends on temperature T, on the applied electric field E, and the concentration of localized states N. Depending on the model, increased temperature may either increase or decrease carrier mobility, applied electric field can increase mobility by contributing to thermal ionization of trapped charges, and ...
Free carrier concentration is the concentration of free carriers in a doped semiconductor. It is similar to the carrier concentration in a metal and for the purposes of calculating currents or drift velocities can be used in the same way. Free carriers are electrons that have been introduced into the conduction band (valence band) by doping ...
This intraband absorption is different from interband absorption because the excited carrier is already in an excited band, such as an electron in the conduction band or a hole in the valence band, where it is free to move. In interband absorption, the carrier starts in a fixed, nonconducting band and is excited to a conducting one.
N dop is the net density of dopants (either donors or acceptors). When doping profiles exceed the Debye length, majority carriers no longer behave according to the distribution of the dopants. Instead, a measure of the profile of the doping gradients provides an "effective" profile that better matches the profile of the majority carrier density.
From the kinetic theory of gases, [20] thermal conductivity of principal carrier i (p, e, f and ph) is =,, where n i is the carrier density and the heat capacity is per carrier, u i is the carrier speed and λ i is the mean free path (distance traveled by carrier before an scattering event). Thus, the larger the carrier density, heat capacity ...
In solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices , such as photodiodes , light ...
On samples with low free carrier density conductance transients have also been used for a DLTS analysis. [ 4 ] In addition to the conventional temperature scan DLTS, in which the temperature is swept while pulsing the device at a constant frequency, the temperature can be kept constant and sweep the pulsing frequency.