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  2. Flash memory - Wikipedia

    en.wikipedia.org/wiki/Flash_memory

    In portable devices, it is preferred to use flash memory because of its mechanical shock resistance since mechanical drives are more prone to mechanical damage. [4] Because erase cycles are slow, the large block sizes used in flash memory erasing give it a significant speed advantage over non-flash EEPROM when writing large amounts of data.

  3. EEPROM - Wikipedia

    en.wikipedia.org/wiki/EEPROM

    The first EEPROM that used Fowler-Nordheim tunnelling to erase data was invented by Bernward and patented by Siemens in 1974. [24] In February 1977, Israeli-American Eliyahou Harari at Hughes Aircraft Company patented in the US a modern EEPROM technology, based on Fowler-Nordheim tunnelling through a thin silicon dioxide layer between the floating-gate and the wafer.

  4. EPROM - Wikipedia

    en.wikipedia.org/wiki/Eprom

    An EPROM (rarely EROM), or erasable programmable read-only memory, is a type of programmable read-only memory (PROM) chip that retains its data when its power supply is switched off. Computer memory that can retrieve stored data after a power supply has been turned off and back on is called non-volatile .

  5. Write amplification - Wikipedia

    en.wikipedia.org/wiki/Write_amplification

    Device's built-in DRAM cache The built-in DRAM cache of the storage device (usually SSD) may used to decrease the write amplification Variable Inverse (good) TRIM command for SATA or UNMAP for SCSI These commands must be sent by the operating system (OS) which tells the storage device which pages contain invalid data.

  6. Semiconductor memory - Wikipedia

    en.wikipedia.org/wiki/Semiconductor_memory

    The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM , EEPROM and flash memory ) uses floating-gate memory cells, which consist of a single floating-gate transistor ...

  7. Ferroelectric RAM - Wikipedia

    en.wikipedia.org/wiki/Ferroelectric_RAM

    Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory .

  8. AOL Mail

    mail.aol.com

    Get AOL Mail for FREE! Manage your email like never before with travel, photo & document views. Personalize your inbox with themes & tabs. You've Got Mail!

  9. Memory scrubbing - Wikipedia

    en.wikipedia.org/wiki/Memory_scrubbing

    The normal memory reads issued by the CPU or DMA devices are checked for ECC errors, but due to data locality reasons they can be confined to a small range of addresses and keeping other memory locations untouched for a very long time. These locations can become vulnerable to more than one soft error, while scrubbing ensures the checking of the ...