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For several years, the Semiconductor Industry Association (SIA) gave this responsibility of coordination to the United States, which led to the creation of an American style roadmap, the National Technology Roadmap for Semiconductors (NTRS). [5] The first semiconductor roadmap, published by the SIA in 1993.
Gallium(III) oxide is an inorganic compound and ultra-wide-bandgap semiconductor with the formula Ga 2 O 3. It is actively studied for applications in power electronics, phosphors, and gas sensing. [5] [6] [7] The compound has several polymorphs, of which the monoclinic β-phase is the most stable.
The IRDS was established in 2016 and is the successor to the International Technology Roadmap for Semiconductors. These predictions are intended to allow coordination of efforts across academia, manufacturers, equipment suppliers, and national research laboratories. The IEEE specifies the goals of the roadmap as: [1]
About 2010 the Nanoelectronic Research Initiative (NRI) studied various circuits in various technologies. [2]Nikonov benchmarked (theoretically) many technologies in 2012, [2] and updated it in 2014. [8]
Indium gallium zinc oxide (IGZO) is a crystalline semiconducting material, consisting of indium (In), gallium (Ga), zinc (Zn) and oxygen (O), with a unique atomic arrangement that ensures stable performance. This unique crystalline structure enhances picture resolution and supports compatibility with diverse display technologies, contributing ...
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
Gallium arsenide was first synthesized and studied by Victor Goldschmidt in 1926 by passing arsenic vapors mixed with hydrogen over gallium(III) oxide at 600 °C. [7] [8] The semiconductor properties of GaAs and other III-V compounds were patented by Heinrich Welker at Siemens-Schuckert in 1951 [9] and described in a 1952 publication. [10]
MOS Technology, Inc. ("MOS" being short for Metal Oxide Semiconductor), later known as CSG (Commodore Semiconductor Group) and GMT Microelectronics, was a semiconductor design and fabrication company based in Audubon, Pennsylvania. It is most famous for its 6502 microprocessor and various designs for Commodore International's range of home ...