Search results
Results from the WOW.Com Content Network
For several years, the Semiconductor Industry Association (SIA) gave this responsibility of coordination to the United States, which led to the creation of an American style roadmap, the National Technology Roadmap for Semiconductors (NTRS). [5] The first semiconductor roadmap, published by the SIA in 1993.
Gallium(III) oxide is an inorganic compound and ultra-wide-bandgap semiconductor with the formula Ga 2 O 3. It is actively studied for applications in power electronics, phosphors, and gas sensing. [5] [6] [7] The compound has several polymorphs, of which the monoclinic β-phase is the most stable.
The IRDS was established in 2016 and is the successor to the International Technology Roadmap for Semiconductors. These predictions are intended to allow coordination of efforts across academia, manufacturers, equipment suppliers, and national research laboratories. The IEEE specifies the goals of the roadmap as: [1]
About 2010 the Nanoelectronic Research Initiative (NRI) studied various circuits in various technologies. [2]Nikonov benchmarked (theoretically) many technologies in 2012, [2] and updated it in 2014. [8]
Indium gallium zinc oxide (IGZO) is a crystalline semiconducting material, consisting of indium (In), gallium (Ga), zinc (Zn) and oxygen (O), with a unique atomic arrangement that ensures stable performance. This unique crystalline structure enhances picture resolution and supports compatibility with diverse display technologies, contributing ...
At room temperature, gallium metal is not reactive with air and water because it forms a passive, protective oxide layer. At higher temperatures, however, it reacts with atmospheric oxygen to form gallium(III) oxide, Ga 2 O 3. [4] Reducing Ga 2 O 3 with elemental gallium in vacuum at 500 °C to 700 °C yields the dark brown gallium(I) oxide, Ga ...
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
Gallium nitride (Ga N) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure .