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  2. Open collector - Wikipedia

    en.wikipedia.org/wiki/Open_collector

    The NPN BJT (n-type bipolar junction transistor) and nMOS (n-type metal oxide semiconductor field effect transistor) have greater conductance than their PNP and pMOS relatives, so may be more commonly used for these outputs. Open outputs using PNP and pMOS transistors will use the opposite internal voltage rail used by NPN and nMOS transistors.

  3. 2N3906 - Wikipedia

    en.wikipedia.org/wiki/2N3906

    The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. [1] [2] It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3904 NPN transistor. [3]

  4. Output signal switching device - Wikipedia

    en.wikipedia.org/wiki/Output_Signal_Switching_Device

    In the non-tripped state, the outputs periodically pulse low. The protective device checks the output, to make sure it does indeed go low when commanded. If not, the output may have failed or has shorted to 24V somewhere else. Between OSSD1 and OSSD2 the pulse intervals are staggered to check for crisscrossed wiring between the two. [1]

  5. 2N2222 - Wikipedia

    en.wikipedia.org/wiki/2N2222

    The 2N2907 is an equally popular PNP transistor complementary to the 2N2222. [14] The 2N3904 is an NPN transistor that can only switch one-third the current of the 2N2222 but has otherwise similar characteristics.

  6. 2N3904 - Wikipedia

    en.wikipedia.org/wiki/2N3904

    A 2N3904 made by Motorola.The pinout from left to right is: Emitter, Base, Collector. [1] A 2N3904 (lower left) in a TO-92 package on a breadboard. The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications.

  7. Insulated-gate bipolar transistor - Wikipedia

    en.wikipedia.org/wiki/Insulated-gate_bipolar...

    An IGBT cell is constructed similarly to an n-channel vertical-construction power MOSFET, except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor. This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET. The whole ...

  8. Push–pull output - Wikipedia

    en.wikipedia.org/wiki/Push–pull_output

    A Class B push–pull output driver using a pair of complementary PNP and NPN bipolar junction transistors configured as emitter followers. A push–pull amplifier is a type of electronic circuit that uses a pair of active devices that alternately supply current to, or absorb current from, a connected load. This kind of amplifier can enhance ...

  9. Bipolar junction transistor - Wikipedia

    en.wikipedia.org/wiki/Bipolar_junction_transistor

    A PNP BJT will function like two diodes that share an N-type cathode region, and the NPN like two diodes sharing a P-type anode region. Connecting two diodes with wires will not make a BJT, since minority carriers will not be able to get from one p–n junction to the other through the wire.

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