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The superconducting nanowire single-photon detector (SNSPD or SSPD) is a type of optical and near-infrared single-photon detector based on a current-biased superconducting nanowire. [1] It was first developed by scientists at Moscow State Pedagogical University and at the University of Rochester in 2001.
Corn-like nanowire is a one-dimensional nanowire with interconnected nanoparticles on the surface, providing a large percentage of reactive facets. TiO 2 corn-like nanowires were first prepared by a surface modification concept using surface tension stress mechanism through a two consecutive hydrothermal operation, and showed an increase of 12% ...
Nanowire lasers can be grown site-selectively on Si/SOI wafers with conventional MBE techniques, allowing for pristine structural quality without defects. Nanowire lasers using the group-III nitride and ZnO materials systems have been demonstrated to emit in the visible and ultraviolet, however infrared at the 1.3–1.55 μm is important for telecommunication bands. [3]
Plasmonic nanolaser sensors have recently been demonstrated that can detect specific molecules in air and be used for optical biosensors. Molecules can modify the surface of metal nanoparticles and impact the surface recombination velocity of gain medium of a plasmonic nanolaser, which contributes to the sensing mechanism of plasmonic nanolasers.
These sensors interact with an energetic elementary particle (such as a photon) and deliver a signal that can be related to the type of particle and the nature of the interaction. While many types of particle detectors might be operated with improved performance at cryogenic temperatures, this term generally refers to types that take advantage ...
Schematic of silicon nanowire. Silicon nanowires, also referred to as SiNWs, are a type of semiconductor nanowire most often formed from a silicon precursor by etching of a solid or through catalyzed growth from a vapor or liquid phase. Such nanowires have promising applications in lithium-ion batteries, thermoelectrics and sensors.
In 2020, her research group introduced a method for manufacturing nanowire sensors by electrochemically depositing charge-transfer salt nanowire crystals on sensor substrates, demonstrating their gas sensing capabilities for detecting ammonia concentrations in the range of 1–100 ppm through electrical impedance measurements. [16]
Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45V. Nanoelectronics holds the promise of making computer processors more powerful than are possible with conventional semiconductor fabrication ...