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In any case, the value of the electron affinity of a solid substance is very different from the chemistry and atomic physics electron affinity value for an atom of the same substance in gas phase. For example, a silicon crystal surface has electron affinity 4.05 eV, whereas an isolated silicon atom has electron affinity 1.39 eV.
Electron affinity can be defined in two equivalent ways. First, as the energy that is released by adding an electron to an isolated gaseous atom. The second (reverse) definition is that electron affinity is the energy required to remove an electron from a singly charged gaseous negative ion.
It has a high ionisation energy (1350.8 kJ/mol), low electron affinity (estimated at −60 kJ/mol), and high electronegativity (2.966 χSpec). Krypton can be reacted with fluorine to form the difluoride, KrF 2. The reaction of KrF 2 with B(OTeF 5) 3 produces an unstable compound, Kr(OTeF 5) 2, that contains a krypton-oxygen bond.
This spacing is called the electron affinity (note that this has a different meaning than the electron affinity of chemistry); in silicon for example the electron affinity is 4.05 eV. [16] If the electron affinity E EA and the surface's band-referenced Fermi level E F-E C are known, then the work function is given by
The chemical elements can be broadly divided into metals, metalloids, and nonmetals according to their shared physical and chemical properties.All elemental metals have a shiny appearance (at least when freshly polished); are good conductors of heat and electricity; form alloys with other metallic elements; and have at least one basic oxide.
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The electron affinity (usually given by the symbol in solid state physics) gives the energy difference between the lower edge of the conduction band and the vacuum level of the semiconductor. The band gap (usually given the symbol E g {\displaystyle E_{\rm {g}}} ) gives the energy difference between the lower edge of the conduction band and the ...
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