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A gate equivalent (GE) stands for a unit of measure which allows specifying manufacturing-technology-independent complexity of digital electronic circuits.For today's CMOS technologies, the silicon area of a two-input drive-strength-one NAND gate usually constitutes the technology-dependent unit area commonly referred to as gate equivalent.
The term "5 nm" does not indicate that any physical feature (such as gate length, metal pitch or gate pitch) of the transistors is five nanometers in size. Historically, the number used in the name of a technology node represented the gate length, but it started deviating from the actual length to smaller numbers (by Intel) around 2011. [3]
By contrast, static timing analysis computes the delays of entire paths, using delay calculation to determine the delay of each gate and wire. There are many methods used for delay calculation for the gate itself. The choice depends primarily on the speed and accuracy required: Circuit simulators such as SPICE may be used. This is the most ...
The problem with having a complicated circuit (i.e. one with many elements, such as logic gates) is that each element takes up physical space and costs time and money to produce. Circuit minimization may be one form of logic optimization used to reduce the area of complex logic in integrated circuits .
FO4 is generally used as a delay metric because such a load is generally seen in case of tapered buffers driving large loads, and approximately in any logic gate of a logic path sized for minimum delay. Also, for most technologies the optimum fanout for such buffers generally varies from 2.7 to 5.3. [1]
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In semiconductor manufacturing, the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node.. The term "2 nanometer", or alternatively "20 angstrom" (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors.
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