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The equation is called the Shockley ideal diode equation when the ideality factor equals 1, thus is sometimes omitted. The ideality factor typically varies from 1 to 2 (though can in some cases be higher), depending on the fabrication process and semiconductor material .
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
The Shockley ideal diode equation or the diode law (named after the bipolar junction transistor co-inventor William Bradford Shockley) models the exponential current–voltage (I–V) relationship of diodes in moderate forward or reverse bias. The article Shockley diode equation provides details.
It is a PNPN diode with alternating layers of P-type and N-type material. It is equivalent to a thyristor with a disconnected gate. Shockley diodes were manufactured and marketed by Shockley Semiconductor Laboratory in the late 1950s. The Shockley diode has a negative resistance characteristic. [1] It was largely superseded by the diac.
The ideality factor (also called the emissivity factor) is a fitting parameter that describes how closely the diode's behavior matches that predicted by theory, which assumes the p–n junction of the diode is an infinite plane and no recombination occurs within the space-charge region. A perfect match to theory is indicated when n = 1.
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Diode law current–voltage curve. For simplicity, diodes may sometimes be assumed to have no voltage drop or resistance when forward-biased and infinite resistance when reverse-biased. But real diodes are better approximated by the Shockley diode equation, which has an more complicated exponential current–voltage relationship called the ...
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