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The laser diode chip removed and placed on the eye of a needle for scale A laser diode with the case cut away. The laser diode chip is the small black chip at the front; a photodiode at the back is used to control output power. SEM (scanning electron microscope) image of a commercial laser diode with its case and window cut away. The anode ...
The combination of multiple heterojunctions together in a device is called a heterostructure, although the two terms are commonly used interchangeably. The requirement that each material be a semiconductor with unequal band gaps is somewhat loose, especially on small length scales, where electronic properties depend on spatial properties.
The silicon laser is fabricated by a technique called plasma assisted wafer bonding. Silicon waveguides are first fabricated on a silicon on insulator (SOI) wafer. This SOI wafer and the un-patterned III-V wafer are then exposed to an oxygen plasma before being pressed together at a low (for semiconductor manufacturing) temperature of 300C for 12 hours.
In semiconductor laser theory, the optical gain is produced in a semiconductor material. The choice of material depends on the desired wavelength and properties such as modulation speed. It may be a bulk semiconductor, but more often a quantum heterostructure. Pumping may be electrically or optically . All these structures can be described in a ...
Interband cascade lasers (ICLs) are a type of laser diode that can produce coherent radiation over a large part of the mid-infrared region of the electromagnetic spectrum. They are fabricated from epitaxially -grown semiconductor heterostructures composed of layers of indium arsenide (InAs), gallium antimonide (GaSb), aluminum antimonide (AlSb ...
The achievement of the first 300ºK continuous wave diode laser was reported in Investigation of the influence of the AlGaAs-GaAs heterostructure parameters on the laser threshold current and the realization of the continuous emission at the room temperature [2] Dmitri Garbuzov received his Ph.D. in 1968, and Doctor of Science degree in 1979.
A quantum-well laser is a laser diode in which the active region of the device is so narrow that quantum confinement occurs. Laser diodes are formed in compound semiconductor materials that (quite unlike silicon ) are able to emit light efficiently.
Absorption is the active process in photodiodes, solar cells and other semiconductor photodetectors, while stimulated emission is the principle of operation in laser diodes. Besides light excitation, carriers in semiconductors can also be generated by an external electric field, for example in light-emitting diodes and transistors.
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