Ad
related to: heterostructure laser
Search results
Results from the WOW.Com Content Network
The combination of multiple heterojunctions together in a device is called a heterostructure, although the two terms are commonly used interchangeably. The requirement that each material be a semiconductor with unequal band gaps is somewhat loose, especially on small length scales, where electronic properties depend on spatial properties.
The innovation that met the room temperature challenge was the double-heterostructure laser. The trick was to quickly move the wafer in the LPE apparatus between different melts of aluminum gallium arsenide (p- and n-type) and a third melt of gallium arsenide. It had to be done rapidly since the gallium arsenide core region needed to be ...
Zhores Ivanovich Alferov (Russian: Жоре́с Ива́нович Алфёров, IPA: [ʐɐˈrɛs ɨˈvanəvʲɪtɕ ɐlˈfʲɵrəf]; Belarusian: Жарэс Іва́навіч Алфёраў; 15 March 1930 – 1 March 2019) was a Soviet and Russian [1] [2] physicist and academic who contributed significantly to the creation of modern heterostructure physics and electronics.
Also, he realized that the laser wavelength could be changed merely by changing the thickness of the thin quantum well layers, whereas in the conventional laser a change in wavelength requires a change in layer composition. Such a laser, he reasoned, would have superior performance characteristics compared to the standard double-heterostructure ...
In semiconductor laser theory, the optical gain is produced in a semiconductor material. The choice of material depends on the desired wavelength and properties such as modulation speed. It may be a bulk semiconductor, but more often a quantum heterostructure. Pumping may be electrically or optically . All these structures can be described in a ...
Herbert Kroemer (German: [ˈhɛʁbɛʁt ˈkʁøːmɐ] ⓘ; August 25, 1928 – March 8, 2024) was a German-American physicist who, along with Zhores Alferov, received the Nobel Prize in Physics in 2000 for "developing semiconductor heterostructures used in high-speed- and opto-electronics".
A distributed feedback (DFB) quantum cascade laser [25] is similar to a Fabry–Pérot laser, except for a distributed Bragg reflector (DBR) built on top of the waveguide to prevent it from emitting at other than the desired wavelength. This forces single mode operation of the laser, even at higher operating currents.
The achievement of the first 300ºK continuous wave diode laser was reported in Investigation of the influence of the AlGaAs-GaAs heterostructure parameters on the laser threshold current and the realization of the continuous emission at the room temperature [2] Dmitri Garbuzov received his Ph.D. in 1968, and Doctor of Science degree in 1979.
Ad
related to: heterostructure laser