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Cathodic arc deposition or Arc-PVD is a physical vapor deposition technique in which an electric arc is used to vaporize material from a cathode target. The vaporized material then condenses on a substrate, forming a thin film. The technique can be used to deposit metallic, ceramic, and composite films.
Print/export Download as PDF; Printable version; ... Cathodic arc deposition; E. Evaporation (deposition) H. High-power impulse magnetron sputtering; I.
Ion beam deposition (IBD) is a process of applying materials to a target through the application of an ion beam. [1] Ion beam deposition setup with mass separator. An ion beam deposition apparatus typically consists of an ion source, ion optics, and the deposition target. Optionally a mass analyzer can be incorporated. [2]
Physical vapor deposition (PVD), sometimes called physical vapor transport (PVT), describes a variety of vacuum deposition methods which can be used to produce thin films and coatings on substrates including metals, ceramics, glass, and polymers. PVD is characterized by a process in which the material transitions from a condensed phase to a ...
Download as PDF; Printable version; ... Pages in category "Thin film deposition" ... Cathodic arc deposition; Chemical bath deposition;
Vacuum deposition is a group of processes used to deposit layers of material atom-by-atom or molecule-by-molecule on a solid surface. These processes operate at pressures well below atmospheric pressure (i.e., vacuum ).
In the cathodic process, positively charged material is deposited on the negatively charged electrode, or cathode. [3] When an electric field is applied, all of the charged species migrate by the process of electrophoresis towards the electrode with the opposite charge. There are several mechanisms by which material can be deposited on the ...
The PVD process can be carried out at lower deposition temperatures and without corrosive products, but deposition rates are typically lower. Electron-beam physical vapor deposition, however, yields a high deposition rate from 0.1 to 100 μm/min at relatively low substrate temperatures, with very high material utilization efficiency. The ...