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  2. Fin field-effect transistor - Wikipedia

    en.wikipedia.org/wiki/Fin_field-effect_transistor

    These devices have been given the generic name "FinFETs" because the source/drain region forms fins on the silicon surface. The FinFET devices have significantly faster switching times and higher current density than planar CMOS (complementary metal–oxide–semiconductor) technology. [1] FinFET is a type of non-planar transistor, or "3D ...

  3. Multigate device - Wikipedia

    en.wikipedia.org/wiki/Multigate_device

    FinFET (fin field-effect transistor) is a type of non-planar transistor, or "3D" transistor (not to be confused with 3D microchips). [8] The FinFET is a variation on traditional MOSFETs distinguished by the presence of a thin silicon "fin" inversion channel on top of the substrate, allowing the gate to make two points of contact: the left and ...

  4. Field-effect transistor - Wikipedia

    en.wikipedia.org/wiki/Field-effect_transistor

    Julius Edgar Lilienfeld, who proposed the concept of a field-effect transistor in 1925.. The concept of a field-effect transistor (FET) was first patented by the Austro-Hungarian born physicist Julius Edgar Lilienfeld in 1925 [1] and by Oskar Heil in 1934, but they were unable to build a working practical semiconducting device based on the concept.

  5. 14 nm process - Wikipedia

    en.wikipedia.org/wiki/14_nm_process

    All "14 nm" nodes use FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology that is a non-planar evolution of planar silicon CMOS technology. Since at least 1997, "process nodes" have been named purely on a marketing basis, and have no relation to the dimensions on the integrated circuit; [ 1 ] neither gate ...

  6. Semiconductor device fabrication - Wikipedia

    en.wikipedia.org/wiki/Semiconductor_device...

    In 2011, Intel demonstrated Fin field-effect transistors (FinFETs), where the gate surrounds the channel on three sides, allowing for increased energy efficiency and lower gate delay—and thus greater performance—over planar transistors at the 22nm node, because planar transistors which only have one surface acting as a channel, started to ...

  7. Carbon nanotube field-effect transistor - Wikipedia

    en.wikipedia.org/wiki/Carbon_nanotube_field...

    For planar CNTFETs with different design parameters, the FET with a shorter channel length produces a higher saturation current, and the saturation drain current also becomes higher for the FET consisting of smaller diameter keeping the length constant. For cylindrical CNTFETs, it is clear that a higher drain current is driven than that of ...

  8. Planar process - Wikipedia

    en.wikipedia.org/wiki/Planar_process

    The planar process is a manufacturing process used in the semiconductor industry to build individual components of a transistor, and in turn, connect those transistors together. It is the primary process by which silicon integrated circuit chips are built, and it is the most commonly used method of producing junctions during the manufacture of ...

  9. LDMOS - Wikipedia

    en.wikipedia.org/wiki/LDMOS

    LDMOS (laterally-diffused metal-oxide semiconductor) [1] is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often fabricated on p/p + silicon epitaxial layers.