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The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. [ 1 ]
The prefix is followed by a two-, three- or four-digit number with no significance as to device properties, although early devices with low numbers tend to be germanium devices. For example, 2N3055 is a silicon n–p–n power transistor, 2N1301 is a p–n–p germanium switching transistor. A letter suffix, such as "A", is sometimes used to ...
Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]
The JEDEC registration of a device number ensures particular rated values will be met by all parts offered under that number. JEDEC registered parameters include outline dimensions, small-signal current gain, transition frequency, maximum values for voltage withstand, current rating, power dissipation and temperature rating, and others, measured under standard test conditions.
According to the manufacturer, the NAD 3020 is a high voltage design that uses the same large powerful output transistors (2N3055 and MJ2955) that "other manufacturers employ in their '60-watt' amplifiers", enabling the amplifier to deliver power headroom for musical transients. [7]
The popular 2N3055 power transistor in a TO-3 case has an internal thermal resistance from junction to case of 1.52 °C/W. [4] The contact between the device case and heat sink may have a thermal resistance between 0.5 and 1.7 °C/W, depending on the case size and use of grease or insulating mica washer. [3]
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